Related papers: Hyperfine Structure of Transition Metal Defects in…
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an…
Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum…
Optically addressable paramagnetic defects in wide-band-gap semiconductors are promising platforms for quantum communications and sensing. The presence of avoided crossings between the electronic levels of these defects can substantially…
We consider the spin-exchange (SE) cross section in electron scattering from $^3$He\,{\scriptsize II}, which drives the hyperfine-changing \hbox{3.46 cm} (8.665 GHz) line transition. Both the analytical quantum defect method --- applicable…
Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from…
Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts…
We experimentally demonstrate an approach to scale up quantum devices by harnessing spin defects in the environment of a quantum probe. We follow this approach to identify, locate, and control two electron-nuclear spin defects in the…
Two-dimensional (2D) transition metal dichalcogenide (TMD) materials have versatile electronic and optical properties. TMD nanoribbons show interesting properties due to reduced dimensionality, quantum confinement, and edge states. Tang et…
The transferred hyperfine interaction between nuclear and electron spins in an heavy fermion material depends on the hybridization between the $f$-electron orbitals and those surrounding a distant nucleus. In CeMIn$_5$ (M=Rh, Ir, Co), both…
The decoherence of point defect qubits is often governed by the electron spin-nuclear spin hyperfine interaction that can be parameterized by using ab inito calculations in principle. So far most of the theoretical works have focused on the…
We have theoretically analyzed coherent nuclear-spin dynamics induced by electron transport through a quantum-dot spin valve. The hyperfine interaction between electron and nuclear spins in a quantum dot allows for the transfer of angular…
One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising…
We analyze a model for electronic structure and interactions in twisted transition metal chalcogenide WSe$_2$ for superconductivity. In this material, spin-orbit scattering locks the z-components of spins of low-energy fermions near the…
The influence of the electric field created by a gate potential of the silicon quantum computer on the hyperfine interaction constant (HIC) is obtained. The errors due to technological inaccuracy of location of donor atoms under a gate are…
We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…
Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process…
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra…
This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a…
By applying our methodology, we propose a defect in 4H-SiC which combines a Si vacancy and a C atom substituted with S (VSiSC) to have a spin-triplet ground state with the spin qubit functionality. Our calculations confirm that all…
Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…