Related papers: Low Temperature Relaxation of Donor Bound Electron…
The electron spin-lattice relaxation (SLR) times T1 of Yb3+‡ ions were measured from the temperature dependence of electron spin resonance linewidth in Y0.99Yb0.01Ba2Cu3Ox with different oxygen contents. Raman relaxation processes…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…
The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited…
Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In…
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the…
We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the…
The nuclear spin-lattice relaxation rate ($1/T_{1}$) has been measured in the single crystals of hole doped two-leg ladder compounds Sr$_{14-x}$Ca$_{x}$Cu$_{24}$O$_{41}$ and in the undoped parent material La$_6$Ca$_8$Cu$_{24}$O$_{41}$.…
Muon spin relaxation experiments have been performed in the pyrochlore iridate Pr_2Ir_2O_7 for temperatures in the range 0.025-250 K. Kubo-Toyabe relaxation functions are observed up to > 200 K, indicating static magnetism over this…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
Motivated by a recent proposal by O. P. Sushkov and co-workers to search for a P,T-violating Schiff moment of the $^{207}$Pb nucleus in a ferroelectric solid, we have carried out a high-field nuclear magnetic resonance study of the…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
We measure the dissipation and frequency shift of a magnetically coupled cantilever in the vicinity of a silicon chip, down to $25$ mK. The dissipation and frequency shift originates from the interaction with the unpaired electrons,…
We report the observation of a frequency ($\omega $) and temperature (T) -dependent loss peak in $\chi''$ and accompanying dispersion in $\chi'$ from microwave (2-18GHz) measurements of the complex susceptibility $\tilde{\chi}(\omega,…
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…
Spin relaxation in undoped quasi-spherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…