Related papers: Low Temperature Relaxation of Donor Bound Electron…
Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin…
We study the low-temperature dynamics of a shallow donor, e.g., $^{31}$P, impurity electron spin in silicon, interacting with the bath of nuclear spins of the $^{29}$Si isotope. For small applied magnetic fields, the electron spin…
Spin relaxation between the two lowest-lying spin-states has been studied in the S=4 single molecule magnet Ni$_4$ under steady state conditions of low amplitude and continuous microwave irradiation. The relaxation rate was determined as a…
We report measurements of room-temperature spin-relaxation times $T_1$ and $T_2$ of charge-carrier spins in a $\pi$-conjugated polymer thin film under bipolar injection and low ($1\mbox{ mT}\lesssim B_0\lesssim 10\mbox{ mT}$) static…
Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
The temperature dependence of the electron spin-lattice relaxation SLR was studied in Er0.01Y0.99Ba2Cu3Ox compounds. The data derived from the electron spin resonance ESR and SLR measurements were compared to those from inelastic neutron…
We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured at 8 K.
We study spin-lattice relaxation times of electron spins in Er$^{3+}$:CaWO$_4$ at millikelvin temperature, detected via their coupling to a low-mode volume superconducting resonator. At large magnetic field supporting strong phonon-emission…
Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although…
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for…
We present measurements of magnetic field and frequency dependences of the low temperature (T = 1.8 K) AC-susceptibility, and temperature and field dependences of the longitudinal field positive muon spin relaxation ({\mu}SR) for…
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation…
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$,…