Related papers: Phase Change Memory by GeSbTe Electrodeposition in…
Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Chalcogenide phase-change materials (PCMs) are important for nonvolatile memory and reconfigurable photonic technologies. The GeTe-Sb2Te3 mixture system, commonly referred to as GST, is the most well-known PCM family, but new PCMs are…
In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT)…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
The optical memristive switches are electrically activated optical switches that can memorize the current state. They can be used as optical latching switches in which the switching state is changed only by applying an electrical…
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability…
The rapid rise of artificial intelligence, and in-memory computing has reinvigorated research on scalable, energy-efficient, and reconfigurable photonic hardware. Non-volatile phase-change materials (PCMs) are attractive, as they offer…
Phase-change materials (PCMs) are the subject of considerable interest because they have been recognized as potential active layers for next-generation non-volatile memory devices, known as Phase Change Random Access Memories (PRAMs). By…
In the last decade phase change materials (PCM) research has switched from practical application in optical data storage toward electrical phase change random access memory technologies (PCRAM). As these devices are commercialised, we…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power…
Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is…
Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an…
Chalcogenide materials are an important class of phase change material (PCMs) owing to their employment in digital memory solutions. Chalgogenide materials have applications in phase change random access memory (PCRAM) due to their ability…
We analyze, design and assess the performance of a reflective reconfigurable metasurface (MS) architecture for optical wireless communications. The device is based on the Ge-Sb-Te (GST225) phase-change material (PCM) alloy, thermally…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…