Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by doping Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb2Te3 acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (Rlong/Rshort) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers.
Cite
@article{arxiv.2209.15233,
title = {Advanced interfacial phase change material: structurally confined and interfacially extended superlattice},
author = {Hyeon wook Lim and Young sam Kim and Kyu-jin Jo and Seok-Choi and Chang Woo Lee and Dasol Kim and Ki hyeon Kwon and Hoe don Kwon and Soo bin Hwang and Byung-Joon Choi and Cheol-Woong Yang and Eun Ji Sim and Mann-Ho Cho},
journal= {arXiv preprint arXiv:2209.15233},
year = {2022}
}
Comments
5 Figures and 2 table, 5 Supplementary figures, 27 pages There are problems with typos and quality degradation of figures during PDF conversion process, so we resubmit the updated one in which those issues are resolved. Under mutual agreement between our group(Prof.m.h.cho) and Prof. Robert E.Simpson group, each research content is submitted separately to arXiv.org on the same day. (2022. 9/30)