Related papers: High-speed silicon microring modulator at 2-um wav…
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can…
Electro-optic modulators lie at the heart of complex integration and high density electro-optic systems. One of the representative electro-optic modulators is thin film lithium niobate based microring modulator which has demonstrated…
Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
Applications relying on mid-infrared radiation (Mid-IR, $\lambda\sim$ 3-30 $\mu$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of…
We demonstrate all-optical wavelength conversion at 10 Gb/s for differential phase-shift keyed (DPSK) data signals in the C-band, based on four-wave mixing (FWM) in a silicon ring resonator. Error-free operation with a system penalty of ~…
A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 {\mu}m, resulting in a record low…
Electro-optic modulators for next-generation optical interconnects require low loss-efficiency products, compact footprints, high modulation efficiency, broad bandwidths, and low losses. Here we propose and demonstrate a low-loss…
Microelectromechanical systems and integrated photonics provide the basis for many reliable and compact circuit elements in modern communication systems. Electro-opto-mechanical devices are currently one of the leading approaches to realize…
We probe the motion of a 6 $\mu g$ magnetically levitated superconducting microsphere using optical interferometry at 3 K, achieving a resolution better than 1 $nm/ \sqrt{Hz}$, and use the measured signal to feedback-cool its motion. The…
High-speed photonic integrated circuits leveraging the thin-film lithium niobate (TFLN) platform present a promising approach to address the burgeoning global data traffic demands. As a pivotal component, TFLN-based electro-optic (EO)…
We show that subwavelength silicon-rich nitride waveguides efficiently sustain high-speed transmissions at 2 $\mu$m. We report the transmission of a 10 Gbit/s signal over 3.5 cm with negligible power penalty. Parametric conversion in the…
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which…
The generation of rapidly tunable Optical Vortex (OV) beams is one of the most demanding research areas of the present era as they possess Orbital Angular Momentum (OAM) with additional degrees of freedom that can be exploited to enhance…
Optical interconnects are the most promising solution to address the data-movement bottleneck in data centers. Silicon microdisks, benefiting from their compact footprint, low energy consumption, and wavelength division multiplexing (WDM)…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO…
A photonic millimeter wave local oscillator capable of producing two microwatts of radiated power at 224 GHz has been developed. The device was tested in one antenna of Smithsonian Institution's Submillimeter Array (SMA) and was found to…
We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88…
Modulation and control of lasers and optical signals is necessary for trapped-ion and cold neutral atom quantum systems. Given the diversity of atomic species, experimental modalities, and architectures, integrated optical modulators…