Related papers: High-speed silicon microring modulator at 2-um wav…
Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical modulator. By integrating vanadium dioxide (a PCM) within…
Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate…
A dual-polarization balanced superconductor-insulator-superconductor mixer operating at 2 mm wavelength is realized in form of a monolithic planar integrated circuit. Planar orthomode transducers and LO couplers are enabled by using silicon…
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high…
An energy/area-efficient low-cost broadband linearity enhancement technique for electro-optic micro-ring modulators (MRM) is proposed to achieve 6.1-dB dynamic linearity improvement in spurious-free-dynamic-range with intermodulation…
Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints,…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
We demonstrate efficient, low power, continuous-wave four-wave mixing in the C-band, using a high index doped silica glass micro ring resonator having a Q-factor of 1.2 million. A record high conversion efficiency for this kind of device is…
We demonstrate an optical data wavelength converter based on an electrically driven photonic molecule structure comprising two coupled active silicon microring resonators. The converter, supplied by a continuous-wave (CW) microwave drive…
Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent…
Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate…
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge…
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…
Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…
We report disk-shaped silicon optomechanical resonators with frequency up to 1.75 GHz in the ultrahigh frequency band. Optical transduction of the thermal motion of the disks' in-plane vibrational modes yields a displacement sensitivity of…
We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a…
Silicon carbide is a promising material platform for hosting various color centers suitable for quantum information processing. Here, we report the design and demonstration of an integrated electro-optic modulator that can directly…
Intensity modulators are fundamental components for integrated photonics. From near infrared to visible spectral ranges, they find applications in optical communication and quantum technologies. In particular, they are required for the…