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We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the…
Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods…
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and…
High-stress silicon nitride (Si3N4) membranes represent the state-of-the-art for cavity optomechanics, combining ultralow dissipation, optical transparency, and full compatibility with wafer-scale nanofabrication. Yet their integration into…
Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire…
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast…
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut…
The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
The reflectivity of various Bragg reflectors in connection to waveguide structures, including nanowires, has been investigated using modal reflection and transmission matrices. A semi-analytical model was applied yielding increased…
Optical metasurfaces, comprised of subwavelength nanostructures, hold a great promise to high-power laser optics but also a limited pertinence due to their currently limited aperture size, throughput and durability. Here, an alternative…
Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…
We report the design, nanofabrication, and characterization of high-quality polymer-based micromirror structures employing the 3D two-photon polymerization lithography technique. Compared to conventional microcavity approaches, our…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Tailoring the emission of plasmonic nanowire-based lasers represents one of the major challenges in the field of nanoplasmonics, given the envisaged integration of such devices into on-chip all-optical circuits. In this study, we proposed a…
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…