Related papers: Optically Controlled Supercapacitors with Semicond…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
With the usage of two transparent electrodes, organic solar cells are semitransparent and may be combined to parallel-connected multi-junction devices or used for innovative applications like power-generating windows. A challenging issue is…
Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it…
We build a holographic $s$-wave conductor/superconductor model and an insulator/superconductor model in the four-dimensional conformal anomaly corrected~(CAC) AdS gravity. The effects of CAC parameter $\alpha$ are studied using both…
Nanoscale dielectric resonators and quantum-confined semiconductors have enabled unprecedented control over light absorption and excited charges, respectively. In this work, we embed luminescent silicon nanocrystals (Si-NCs) into a 2D array…
We develop an analytical model to describe sub-bandgap optical absorption in two-dimensional semiconducting transition metal dichalcogenide (s-TMD) nanoflakes. The material system represents an array of few-layer molybdenum disulfide…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
In a mesoscopic metal in proximity with a superconductor, the electronic conductance is enhanced in a very energy-sensitive way. In this paper, we discuss the spectral conductance of a proximity superconductor from both the theoretical and…
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…
A simple tight-binding model is constructed for the description of the electronic structure of some Ce-based filled skutterudite compounds showing an energy gap or pseudogap behavior. Assuming band-diagonal electron interactions on this…
Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…
In this work we investigate a low dimensional semiconductor system, in which the light-matter interaction is enhanced by the cooperative behavior of a large number of dipolar oscillators, at different frequencies, mutually phase locked by…
A model is presented for two-dimensional superconductivity at semiconductor-on-metal interfaces mediated by Coulomb interactions between electronically-active interface charges in the semiconductor and screening charges in the metal. The…
We present a novel approach for achieving tightly concentrated optical field by a hybrid photonic-plasmonic device in an integrated platform, which is a triangle-shaped metal taper mounted on top of a dielectric waveguide. This device,…
The remarkable finding of this work is the linear correlation between the critical temperature of superconducting (SC) transition, Tc, and the room-temperature half-width of angular correlation of positron annihila- tion phonons (ACPAP),…
In the sealed-off cesium vapor cell studied in this work, a residual rubidium fraction of approximately $\sim$1\% was observed. We investigate the optical response of these trace Rb atoms in a sealed 1~cm long Cs-filled vapor cell. Despite…
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…
Nanopores made with low dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. In theories and simulations of their operation, it is often assumed that such pores screen ion-ion…