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Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage,…
New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence…
The cuprate Hg0.8Tl0.2Ba2Ca2Cu3O8.33 exhibits the highest superconducting transition temperature Tc of 138K. Achieving superconductivity at even higher temperatures, up to room temperature, represents the ultimate dream of humanity. As…
Reversible exchange of photons between a material and an optical cavity can lead to the formation of hybrid light--matter states where material properties such as the work function\cite{Hutchison_AM2013a}, chemical…
Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon…
An ab-initio investigation of structural parameters, elastic, electronic, thermodynamic and optical properties of MAX phases Nb2AC (A = S, Sn) has been carried out by the plane wave psedudopotential method based on density functional theory…
In the usual perception, surface superconductivity is associated with the surface nucleation of a superconducting condensate above the upper critical field in type-II superconductors or with a rearrangement of phonon properties and the…
Black body materials prove promising candidates to meet future energy demands as they are able to harvest energy from the total bandwidth of solar radiation. Here, we report on high absorption (> 98 %) near-black body-like structures…
Here, we present a theoretical study in the context of photovoltaic (PV) and thermoelectric (TE) applications of ScAgC. The electronic, optical, and thermoelectric properties have been investigated systematically using density functional…
The superconducting transition temperature $T_{c}$ of multilayers of electron-doped cuprates, composed of underdoped (or undoped) and overdoped La% $_{2-x}$Ce$_{x}$CuO$_{4}$ (LCCO) and Pr$_{2-x}$Ce$_{x}$CuO$_{4}$ (PCCO) thin films, is found…
Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance electronics, such as chiplets and (ultra)wide bandgap electronics. Advanced heterogeneous integration not only…
Future colliders such as NLC and JLC will require a highly-polarized macropulse with charge that is more than an order of magnitude beyond that which could be produced for the SLC. The maximum charge from the SLC uniformly-doped GaAs…
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high…
We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…
The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating…
The quasiparticle band structure and optical properties of single-walled zigzag and armchair SiC nanotubes (SiC-NTs) as well as single SiC sheet are investigated by ab initio many-body calculations using the GW and the GW plus…
By means of ab-initio calculations we investigate the optical properties of pure a-SiN$_x$ samples, with $x \in [0.4, 1.8]$, and samples embedding silicon nanoclusters (NCs) of diameter $0.5 \leq d \leq 1.0$ nm. In the pure samples the…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could…