Related papers: How valley-orbit states in silicon quantum dots pr…

We study the energy levels of graphene magnetic circular quantum dot surrounded by an infinite graphene sheet in the presence of an electrostatic potential. We solve Dirac equation to derive the solutions of energy spectrum associated with…

With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for…

Low-lying energy levels of two interacting electrons confined in a two-dimensional parabolic quantum dot in the presence of an external magnetic field have been revised within the frame of a novel model. The present formalism, which gives…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

Low energy spectra of isotropic quantum dots are calculated in the regime of low electron densities where Coulomb interaction causes strong correlations. The earlier developed pocket state method is generalized to allow for continuous…

We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase…

We perform Hartree-Fock calculations to show that quantum dots (i.e. two dimensional systems of up to twenty interacting electrons in an external parabolic potential) undergo a gradual transition to a spin-polarized Wigner crystal with…

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…

The valley splitting of the first few Landau levels is calculated as a function of the magnetic field for electrons confined in a strained silicon quantum well grown on a tilted SiGe substrate, using a parameterized tight-binding method.…

The electronic states of a parabolic quantum dot in a magnetic field are studied with the inclusion of the spin-orbit interaction. The analitycal formulae for the ground state energy of the interacting system are derived. The spin-orbit…

The effect of non-sphericity of the quantum dot on the eigenvalues and eigenfunctions has been investigated for the case of both the finite and infinite barrier. The ground and excited state energies have been calculated for prolate and…

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…

We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…

The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…

We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…

We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization…

We theoretically investigate the ground-state properties of a quantum dot defined on the surface of a strong three-dimensional time-reversal invariant topological insulator. Confinement is realized by ferromagnetic barriers and Coulomb…

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…

We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…

We study the transport through a quantum dot, in the Kondo Coulomb blockade valley, embedded in a mesoscopic device with finite wires. The quantization of states in the circuit that hosts the quantum dot gives rise to finite size effects.…