Related papers: Imaging non-radiative point defects buried in quan…
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more…
Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy…
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation…
Quantum Wells (QW) are of great importance in optoelectronic devices such as LEDs and LASERs, being the emissive layers.Simulating the quantum particles in different QW topologies like rectangular finite potential wells, multiple potential…
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12…
We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we…
Cathodoluminescence spectroscopy (CL) allows characterizing light emission in bulk and nanostructured materials and is a key tool in fields ranging from materials science to nanophotonics. Previously, CL measurements focused on the spectral…
Point-defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain…
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…
Non-Gaussian quantum states are critical resources in photonic quantum information processing, rendering their generation and characterization of increasing importance in quantum optics. In this work, we theoretically and numerically…
Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force…
Several models of oxygenated and hydrogenated surfaces of Si quantum wells and Si nanocrystals of variable shapes have been constructed in order to assess curvature effects on energy gaps due to the three Si-suboxides. Si-suboxides in…
We investigate the quality (Q) factor and the mode dispersion of single-defect nanocavities based on a triangular-lattice GaAs photonic-crystal (PC) membrane, which contain InAs quantum dots (QDs) as a broadband emitter. To obtain a high Q…
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…
Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum…
We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study…
The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional Schr\"{o}dinger equation for the charge impurity in the QW is…
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal…
The integration of topology into photonics has generated a new design framework for constructing robust and unidirectional waveguides, which are not feasible with traditional photonic devices. Here, we overcome current barriers to the…