Related papers: Spin and valley filter based on two-dimensional WS…
In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple valued (or multi-level) cell property, which is in principle realized by sensing…
Utilizing ab initio simulations, we study the spin-dependent electronic transport characteristics within Fe$_4$GeTe$_2$-based van der Waals heterostructures. The electronic density of states for both free-standing and device-configured…
We study spin and valley transports in junctions composed of silicene and topological crystalline insulators. We consider normal/magnetic/normal Dirac metal junctions where a gate electrode is attached to the magnetic region. In…
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…
Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D materials. Through combined experiment and simulation, we…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short…
Since the discovery of the fascinating properties in magic-angle graphene, the exploration of moir\'e systems in other two-dimensional materials has garnered significant attention and given rise to a field known as 'moir\'e physics'. Within…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the…
We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
The conditions for a spontaneous spin polarization in a quantum wire positioned in a zero magnetic field are analyzed under weak population of one-dimensional subbands that gives rise to the efficient quenching of the kinetic energy by the…
Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…
Stacking monolayer semiconductors into heterostructures allows for control of their optical and electronic properties, offering advantages for nanoscale electronics, optoelectronics, and photonics. Specifically, adding a thin spacer between…
We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and…