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Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability…

Mesoscale and Nanoscale Physics · Physics 2024-07-16 Hiroshi Imamura , Hiroko Arai , Rie Matsumoto , Toshiki Yamaji

We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…

Materials Science · Physics 2021-02-24 J. E. Davies , J. D. Watts , J. Novotny , D. Huang , P. G. Eames

Due to their compact size and exceptional sensitivity at room temperature, magnetoresistance (MR) sensors have garnered considerable interest in numerous fields, particularly in the detection of weak magnetic signals in biological systems.…

Applied Physics · Physics 2024-06-25 Jiahui Luo , Zhaojie Xu , Zhenhu Jin , Mixia Wang , Xinxia Cai , Jiamin Chen

Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state…

Performance of magnetoresistive sensors is today mainly limited by their 1/f low-frequency noise. Here, we study this noise component in vortex-based TMR sensors. We compare the noise level in different magnetization configurations of the…

We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane…

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…

Mesoscale and Nanoscale Physics · Physics 2021-10-19 Jhen-Yong Hong , Chun-Yen Chen , Dah-Chin Ling , Isidoro Martínez , César González-Ruano , Farkhad G. Aliev

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…

Materials Science · Physics 2012-04-09 Yan Zhang , E. E. Mendez , Xu Du

The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Ivan Rungger , Oleg N. Mryasov , Stefano Sanvito

Planar Hall magnetoresistive sensors (PHMR) are promising candidates for various magnetic sensing applications due to their high sensitivity, low power consumption, and compatibility with integrated circuit technology. However, their…

Strongly Correlated Electrons · Physics 2025-04-09 Jan Schmidtpeter , Proloy Taran Das , Yevhen Zabila , Conrad Schubert , Thomas Gundrum , Thomas Wondrak , Denys Makarov

Novel methods and technology drive the rapid advances of nuclear magnetic resonance (NMR). The primary objective of developing novel hardware is to improve sensitivity and reliability (and possibly to reduce cost). Automation has made NMR…

Instrumentation and Detectors · Physics 2025-06-16 Josh P. Peters , Frank D. Sönnichsen , Jan-Bernd Hövener , Andrey N. Pravdivtsev

This study investigates a vortex sensor based on a nanoscale (sub-100 nm) magnetic tunnel junction (MTJ) with a strong shape anisotropy, designed for sensitivity to the out-of-plane magnetic field component ($H_z$). The sensor comprises a…

Mesoscale and Nanoscale Physics · Physics 2026-03-10 Ajay Jha , Alvaro Palomino , Stéphane Auffret , Hélène Béa , Ricardo C. Sousa , Liliana D. Buda-Prejbeanu , Bernard Dieny

Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel…

A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…

Mesoscale and Nanoscale Physics · Physics 2024-03-27 Clovis Farley , Edouard Pinsolle , Bertrand Reulet

Nitrogen-vacancy (NV) centres in diamond can be used to detect radiofrequency (RF) signals through coupling of the RF magnetic field with the NV spins, combined with optical readout of the spin state. The sensitivity of such RF detectors…

Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and…

Temperature sensing with nitrogen vacancy (NV) centers using quantum techniques is very promising and further development is expected. Recently, the optically detected magnetic resonance (ODMR) spectrum of a high-density ensemble of the NV…

We demonstrate detection of proton NMR signals with a radio frequency atomic magnetometer tuned to the NMR frequency of 62 kHz. High-frequency operation of the atomic magnetometer makes it relatively insensitive to ambient magnetic field…

Atomic Physics · Physics 2009-11-13 I. M. Savukov , S. J. Seltzer , M. V. Romalis

Vertical packaging of multiple Giant Magnetoresistance (multi-GMR) stacks is a very interesting noise reduction strategy for local magnetic sensor measurements, which has not been reported experimentally so far. Here, we have fabricated…

Applied Physics · Physics 2020-03-18 J. Torrejon , A. Solignac , C. Chopin , J. Moulin , A. Doll , E. Paul , C. Fermon , M. Pannetier-Lecoeur

We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…

Other Condensed Matter · Physics 2015-05-13 C. Wang , Y. -T. Cui , J. Z. Sun , J. A. Katine , R. A. Buhrman , D. C. Ralph
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