Related papers: Cryogenic GaAs high-electron-mobility-transistor a…
Astronomical observations of cosmic sources in the far-infrared and X-ray bands require extreme sensitivity. The most sensitive detectors are cryogenic bolometers and calorimeters operating typically at about 100 mK. The last stage of…
Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as…
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V…
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of…
Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at…
Advances in cryogenic electron microscopy have opened new avenues for probing quantum phenomena in correlated materials. This study reports the installation and performance of a new side-entry condenZero cryogenic cooling system for JEOL…
We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork…
This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a…
Cryogen-free dilution refrigerators generally simplify low temperature research but some types of samples, including superconducting qubits and other nanoelectronic devices, are affected by environmental heat sources such as stray photons…
In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF) and power applications and compare them with III-nitride…
A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a…
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution,…
Low mechanical loss materials are needed to further decrease thermal noise in upcoming gravitational wave detectors. We present an analysis of the contribution of Akhieser and thermoelastic damping on the experimental results of resonant…
Normal nuclear magnetic resonance (NMR) probes cannot be used to make high frequency resolution measurements in a cryogenic environment because they lose their frequency resolution when the liquid sample in the probe freezes. A gaseous…
Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating…
Parametric amplifiers have become a workhorse in superconducting quantum computing, however research and development of these devices has been hampered by inconsistent, and sometimes misleading noise performance characterization…
The latest generation of cosmic microwave background (CMB) telescopes is searching for the undetected faint signature of gravitational waves from inflation in the polarized signal of the CMB. To achieve the unprecedented levels of…
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…
This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications.…
Recent observations made with Advanced LIGO and Advanced Virgo have initiated the era of gravitational-wave astronomy. The number of events detected by these "2nd Generation" (2G) ground-based observatories is partially limited by noise…