Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

N. Samkharadze; A. Kumar; M. J. Manfra; L. N. Pfeiffer; K. W. West; G. A. Csathy

doi:10.1063/1.3586766

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

Mesoscale and Nanoscale Physics 2015-05-28 v1 Other Condensed Matter

Authors: N. Samkharadze , A. Kumar , M. J. Manfra , L. N. Pfeiffer , K. W. West , G. A. Csathy

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Abstract

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

Keywords

He-3 immersion cell semiconductor nanostructures ultra low temperatures strong magnetic fields field-independent thermometry quartz tuning fork viscometry two-dimensional electron gas GaAs quantum well

Cite

@article{arxiv.1105.2350,
  title  = {Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields},
  author = {N. Samkharadze and A. Kumar and M. J. Manfra and L. N. Pfeiffer and K. W. West and G. A. Csathy},
  journal= {arXiv preprint arXiv:1105.2350},
  year   = {2015}
}

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

Abstract

Keywords

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