Related papers: Spin-orbit Torque Switching in an All-Van der Waal…

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2…

Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic…

Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…

Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…

We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…

Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…

Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…

Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for…

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…

Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT…

Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…

Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic FexTb1-x layers decrease and vanish…

Spin-orbit torque (SOT) has been extensively studied as a key mechanism in spintronics applications. However, conventional SOT materials limit the spin polarization direction to the in-plane orientation, which is suboptimal for efficient…

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…

Low crystal symmetry of magnetic van der Waals materials naturally promotes spin-orbital complexity unachievable in common magnetic materials used for spin-orbit torque switching. Here, using first-principles methods, we demonstrate that an…

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…