Related papers: Electroabsorption in gated GaAs nanophotonic waveg…
Multiphoton processes of absorption photoluminescence have enabled a wide range of applications including three-dimensional microfabrication, data storage, and biological imaging. While the applications of two-photon and three-photon…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
The perfect absorption of light in subwavelength thickness layers generally relies on exotic materials, metamaterials or thick metallic gratings. Here we demonstrate that total light absorption can be achieved in ultra-thin gratings…
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth…
Nanoporous gold (npAu) has emerged as a potential candidate for many optical applications exploiting its large surface to volume ratio and high broadband absorption. However, the physical origin of its enhanced visible and near infrared…
Plasmonic detectors have the potential to provide a method of rapid spectroscopy without the need of moving mirrors or gratings. Previous measurements have demonstrated frequency tunable detection based on plasmonic excitations, however…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible…
Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such…
We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…
General analytic expressions for the total absorption coefficient of strong electromagnetic waves caused by confined electrons in Infinite semi-parabolic plus Semi-inverse Squared Quantum Wells (ISPSISQW) are obtained by using the quantum…
Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniques. However, theoretical insights into defect-related…
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both…
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the…
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported.…
We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann…
Absorption and emission of pristine-like semiconducting monolayers of BN, AlN, GaN, and InN are here systematically studied by ab-initio methods. We calculate the absorption spectra for in-plane and out-of-plane light polarization including…
The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to…