Related papers: Recent progress and challenges in magnetic tunnel …
This review synthesizes recent advancements in the study of moir\'e magnetism. This emerging field, at the intersection of twistronics, topology, and strongly correlated systems, explores novel phenomena that arise when moir\'e potentials…
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility…
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc.…
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMD) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for…
2D magnets have emerged as a class of materials highly promising for studies of quantum phenomena and applications in ultra-compact spintronics. Current research aims at design of 2D magnets with particular functional properties. A…
Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or…
Recent technological advances in controlling materials have developed methods to produce idealized two-dimensional (2D) electron systems such as heterogeneous interfaces, molecular-beam-epitaxy (MBE) grown atomic layers, exfoliated thin…
We investigate the impact of monoatomic vacancies in 2D materials on the performance of magnetic tunnel junction (MTJ) devices using first-principles calculations within Density Functional Theory (DFT). Specifically, we analyze the…
Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of…
Molecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. However, fabrication of…
Discovery of intrinsic two-dimensional (2D) magnetic materials is crucial for understanding the fundamentals of 2D magnetism and realizing next-generation magnetoelectronic and magneto-optical devices. Although significant efforts have been…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and…
Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent…
Magnetic tunnel junctions (MTJs) with partially oxidized 9 \AA AlO$_x$-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
2D ferromagnets offer valuable insights into the fundamentals of magnetism and stimulate the progress of ultracompact spintronics. The demand for seamless integration of the materials with the Si technology, particularly helpful to their…