Related papers: Magnetoresistive Sensor Detectivity: A Comparative…
We have studied the influence of the transverse size of a magnetic tunnel nanojunction on the magnitude of the magnetoresistance. During modeling, the size of the right contact was fixed, while the size of the left one gradually changed…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
Establishment of home-made measurement setups for the characterization of MR sensor is proposed and described here. The MR loops of MR sensors can be obtained with the instrument using two-point probe measurement and four-point probe…
We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic structures and the ballistic conductance. The calculated…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
The low magnetic field measurement has been utilized since ancient times in order to find economic resources, to detect magnetic anomalies, etc. In this case, the vector magnetic survey can simultaneously obtain the modulus and direction…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We investigate detection of magnetic data using magnetooptical indicators with in-plane magnetization. A simple model for the magnetooptical detection system is presented. We find that the signal to noise ratio changes strongly with the bit…
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…
Next-generation spintronic sensors aim to overcome the limitations of traditional tunneling-magnetoresistance (TMR) devices, such as complex manufacturing, high $1/f$ noise, and significant offsets. This work presents a comprehensive…
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has…
Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS)…
We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB…
Present information and communication technologies are largely based on electronic devices, which suffer from heat generation and high power consumption. Alternatives like spintronics and magnonics, which harness the spin degree of freedom,…
We demonstrate the sensitivity of a sensor based on an optically-pumped radio-frequency (RF) atomic magnetometer to the polarization state of the detected RF magnetic field, and measure $>$36 dB difference in amplitude sensitivity for…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…