Related papers: Boron and Barium Incorporation at the 4H-SiC/SiO2 …

We demonstrate loading by laser ablation of $^{88}$Sr$^+$ ions into a mm-scale surface-electrode ion trap. The laser used for ablation is a pulsed, frequency-tripled Nd:YAG with pulse energies of 1-10 mJ and durations of 3-5 ns. An…

We report on the development of a 10B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed…

The detector contains four or more layers of natural Boron absorbing thermal neutrons. Thickness of a layer is 0.4 - 1.2 mg/cm2. The layers are deposited on one or on both sides of a metal surface used as contacts. Between the absorbing…

A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can…

High-performance integrated broadband coherent light sources are essential for advanced applications in high-bandwidth data processing and chip-scale metrology, yet remain challenging. In this study, we demonstrate a monolithic Z-cut…

The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of…

This article describes the design features and the first test measurements obtained during the installation of a novel high resolution 2D neutron detection technique. The technique proposed in this work consists of a boron layer (enriched…

We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

Chip-integrated optical frequency combs (OFCs) based on Kerr nonlinear resonators are of great significance given their scalability and wide range of applications. Broadband on-chip OFCs reaching visible wavelengths are especially valuable…

200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C for 30 minutes in Ar ambience. Topographical studies of…

Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…

The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…

Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great…

An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transition of $^{88}$Sr$^+$.…

A new nanofibrous material, consisting of a conductive carbon core and an external layer made of vanadium oxide, has been studied as a cathode for aluminium-ion batteries. The material enables a mixed-ion intercalation mechanism, resulting…

Use of dielectric barrier discharge (DBD) as an ion source for sensitive chemical analysis is uncommon because barrier discharges generate excess noise due to spatial and temporal instability. This design uses contacted, crossed…

The electric dipole-forbidden, quadrupole 6S1/2 <-> 5D3/2 transition in Ba+ near 2051 nm, with a natural linewidth of 13 mHz, is attractive for potential observation of parity non-conservation, and also as a clock transition for a barium…

In this article, we present a detailed characterisation of a multicusp-assisted inductively coupled RF plasma source for plasma immersion ion implantation (PIII). Using laser-induced fluorescence (LIF) and RF-compensated Langmuir probe…

Femtosecond laser modification of fused silica enables precise surface tailoring for the fabrication of micro-optical components such as microlenses and diffractive elements. However, the process is governed by laser-matter interactions…