Related papers: Quantifying epitaxial growth using a purely topogr…
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…
We investigate the stress-driven morphological instability of epitaxially growing multilayer films, which are coherent and dislocation-free. We construct a direct elastic analysis, from which we determine the elastic state of the system…
For the development of porous materials with improved transport properties, a key missing ingredient is to determine the relations between growth kinetics, structure, and transport parameters. Here, we address these relations by studying…
The subtle balance of electronic correlations, crystal field splitting and spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis…
Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition…
Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111)…
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its…
The present paper proposes a novel method of quantification of the variation in biofilm architecture, in correlation with the alteration of growth conditions that include, variations of substrate and conditioning layer. The polymeric…
In this paper a simple (2+1) solid-on-solid model of the epitaxial films growth based on random deposition followed by breaking particle-particle lateral bonds and particles surface diffusion is introduced. The influence of the critical…
An analytical validation is obtained for the evolution equation $$h_t=\Delta[ \mathcal{F}^{-1}(-aE \mathcal{F}(h)) - r/h^2 -\Delta h ],$$ introduced in {\cite{TS}} by W.T. Tekalign and B.J. Spencer to describe the heteroepitaxial growth of…
We report growth and characterization of epitaxial $\alpha$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on…
The step-wise growth of epitaxial Fe on Cu(001)/Si(001), investigated by in-situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation…
We report on controlled growth of photochromic yttrium oxyhydride thin films monitored by $\textit{in-situ}$ composition depth profiling. Films were grown by reactive $e^-$-beam evaporation and subsequently oxidized, while simultaneously…
Controlling thin film formation is technologically challenging. The knowledge of physical properties of the film and of the atoms in the surface vicinity can help improve control over the film growth. We investigate the use of the…
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to…
The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test…
We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth.…
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films…
In this work, we studied the pathways for formation of stoichiometric \tcn~thin films. Polycrystalline and epitaxial \tcn~films were prepared using reactive direct current magnetron (dcMS) sputtering technique. A systematic variation in the…
Thin films formed from small molecules rapidly gain importance in different technological fields. To explain their growth, methods developed for zero--dimensional atoms as the film forming particles are applied. However, in organic thin…