Related papers: Efficient Spin-Orbit Torque Generation in Semicond…
The spin-orbit torque (SOT) in a compensated ferrimagnetic Weyl semimetal, ${\rm Ti}_{2}{\rm MnAl}$, is studied by the linear response theory. We elucidate that the SOT driven by all the occupied electronic states is present in magnetic…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
The development of magnetic heterostructures with strong spin-orbit torques (SOTs), low impedance, strong perpendicular magnetic anisotropy (PMA), and good integration compatibility at the same time is central for high-performance…
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a…
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…
Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low damping-like SOT efficiency per…
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…
Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of…
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
We report on efficient spin current generation at room temperature in rutile type WO$_{2}$ grown on Al$_{2}$O$_{3}$(0001) substrate. The optimal WO$_{2}$ film has (010)-oriented monoclinically distorted rutile structure with metallic…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Current-induced spin-orbit torque (SOT) in normal metal/ferromagnet (NM/FM) bilayers bears great promise for technological applications, but the microscopic origin of purely interfacial SOTs in ultra-thin systems is not yet fully…
Current-induced spin-orbit torque (SOT) plays a crucial role in the next-generation spin-orbitronics. Enhancing its efficiency is both fundamentally and practically interesting and remains a challenge to date. Recently, orbital counterparts…
Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems…
In this work, we review the results of several recent works on the experimental and theoretical studies of monolayer superconducting transition metal dichalcogenides (TMD) such as superconducting MoS2 and NbSe2. We show how the strong Ising…
Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D…
Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two-dimensionality, enabling much smaller…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…