Related papers: THz intersubband electroluminescence from n-type G…
We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector…
Time-resolved multi-terahertz (THz) spectroscopy is used to observe pump fluence-dependent dynamics in the optical conductivity of photoexcited tin selenide (SnSe) over an ultrabroadband spectral range of 0.5 - 11 THz at fluences from 0.1 -…
In the recent years, the number of detected very high energy (VHE: E > 100 GeV) gamma-ray sources has increased rapidly. The sources have been observed at redshifts up to z = 0.536 without strong indications for the presence of absorption…
Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. Their large…
We report a detailed analysis of the energy spectra, second- and high-order structure functions of velocity differences in superfluid $^4$He counterflow turbulence, measured in a wide range of temperatures and heat fluxes. We show that the…
Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are…
2D transition metal dichalcogenides (TMDCs) exhibit an electron-hole liquid phase transition at unusually high temperatures. Because these materials are atomically thin, optical excitation leads to material expansion. As a result, during…
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform…
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…
We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting…
Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating…
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and…
A nondegenerate four-level N-type scheme was experimentally implemented to observe electromagnetically induced transparency (EIT) at the $^{87}$Rb D$_{2}$ line. Radiations of two independent external-cavity semiconductor lasers were used in…
Time-resolved multi-terahertz (THz) spectroscopy is used to observe an ultrafast, non-thermal electronic phase change in SnSe driven by interband photoexcitation with 1.55 eV pump photons. The transient THz photoconductivity spectrum is…
We present a quantum theoretical analysis of the electroluminescence from an intersubband transition of a quantum well structure embedded in a planar microcavity. By using a cluster factorization method, we have derived a closed set of…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
Differential cross sections of the reaction gamma d to K+ Sigma- (p) have been measured with the CLAS detector at Jefferson Lab using incident photons with energies between 1.1 and 3.6 GeV. This is the first complete set of strangeness…
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…
We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…
THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19…