Related papers: Carrier Density and Thickness Dependent Proximity …
Magnetic proximity effect of a topological insulator in contact with a ferromagnet is reported in thin film bilayers of 15 nm thick $BiSbTe_3$ on either 15 or 40 nm thick $SrRuO_3$ on (100) $SrTiO_3$ wafers. Magneto transport results of the…
Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic (STS) studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped…
We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing…
To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ were deposited on the insulating ferromagnet EuS (100) in situ. AC…
The possible realization of dissipationless chiral edge current in a topological insulator / magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the…
Many exotic physics anticipated in topological insulators require a gap to be opened for their topologica surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however…
To achieve and utilize the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TI),it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic…
A key feature of topological insulators is the robustness of the electron energy spectrum. At a surface of a topological insulator, Dirac point is protected by the characteristic symmetry of the system. The breaking of the symmetry opens a…
Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating…
Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of…
Carrier-independent ferromagnetism of chromium doped topological insulator $Bi_xSb_{2-x}Te_3$ thin films,which cannot be explained by current theory of dilute magnetic semiconductor, has been reported recently. To study if it is related to…
The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type)…
The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality.…
Topological insulators are new states of matter with a bulk gap and robust gapless surface states protected by time-reversal symmetry. When time-reversal symmetry is broken, the surface states are gapped, which induces a topological…
We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…
Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states…
The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and…
We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of…
Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…