Related papers: Billion-pixel X-ray camera (BiPC-X)
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…
Chromatic properties of the multi-prism and prism-array X-ray lenses (MPL and PAL) can potentially be utilized for efficient energy filtering and dose reduction in mammography. The line-shaped foci of the lenses are optimal for coupling to…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
Bioluminescence detection requires single-photon sensitivity, extremely low detection limits and wide dynamic range. Such performances were traditionally assured by photomultiplier-tubes based systems. However, development of novel…
In digital cameras, we find a major limitation: the image and video form inherited from a film camera obstructs it from capturing the rapidly changing photonic world. Here, we present vidar, a bit sequence array where each bit represents…
We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide…
We report the first results from an X-ray polarimeter with a micropattern gas proportional counter using an amorphous silicon active matrix readout. With 100% polarized X-rays at 4.5 keV, we obtain a modulation factor of 0.33 +/- 0.03,…
X-ray microtomography at synchrotron sources is fundamentally limited by the high radiation dose applied to the samples, which restricts investigations to non-native tissue states and thereby compromises the biological relevance of the…
Due to the low X-ray photon utilization efficiency and low measurement sensitivity of the electron multiplying charge coupled device (EMCCD) camera setup, the collimator based narrow beam X-ray luminescence computed tomography (XLCT)…
The one-bit quanta image sensor (QIS) is a photon-counting device that captures image intensities using binary bits. Assuming that the analog voltage generated at the floating diffusion of the photodiode follows a Poisson-Gaussian…
Quantitative phase imaging (QPI) is important in many applications such as microscopy and crystallography. To quantitatively reveal phase information, people could either employ interference to map phase distribution into intensity fringes,…
Conventional LIDAR systems require hundreds or thousands of photon detections to form accurate depth and reflectivity images. Recent photon-efficient computational imaging methods are remarkably effective with only 1.0 to 3.0 detected…
The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking…
Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…
Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to track secondary charged particles produced by primary gamma-rays with high resolution. At the lower energies targeted…
Scintillating homogeneous detectors represent the state of the art in electromagnetic calorimetry. Moreover, the currently neglected crystalline nature of the most common inorganic scintillators can be exploited to achieve an outstanding…
One of the main limitations for the resolution of optical instruments is the size of the sensor's pixels. In this paper we introduce a new sub pixel resolution algorithm to enhance the resolution of images. This method is based on the…
The development of multi-layer optics which allow to focus photons up to 100 keV and more promises an enormous jump in sensitivity in the hard X-ray energy band. This technology is already planned to be exploited by future missions…
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…