Related papers: Radio frequency reflectometry in silicon-based qua…
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin…
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit…
A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are…
Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic properties of nanostructures. This detection is achieved using…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits,…
Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits. Radio-frequency (rf) reflectometry plays an important role…
Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Single-shot measurement of the charge arrangement and spin state of a double quantum dot are reported, with measurement times down to ~ 100 ns. Sensing uses radio-frequency reflectometry of a proximal quantum dot in the Coulomb blockade…
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error…
In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple…
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their…
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and…
High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities…
We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing…
Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as…
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required…
Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most…