Related papers: Reducing Solid-State Drive Read Latency by Optimiz…

Solid-state drives (SSDs) have revolutionized data storage with their high performance, energy efficiency, and reliability. However, as storage demands grow, SSDs face critical challenges in scalability, endurance, latency, and security.…

In cost-sensitive deployments, RAID arrays may combine SSDs with different performance levels. Such heterogeneity arises when aging SSDs degrade yet remain usable, or when failed drives are replaced with new devices of explicitly better…

Due to its high density and close-to-SRAM read latency, spin transfer torque RAM (STT-RAM) is considered one of the most-promising emerging memory technologies for designing large last level caches (LLCs). However, in deep sub-micron…

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…

The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this issue, this…

The growing demand for efficient cloud storage solutions has led to the widespread adoption of Solid-State Drives (SSDs) for caching in cloud block storage systems. The management of data writes to SSD caches plays a crucial role in…

This paper studies the impact of DRAM writes on DDR5-based system. To efficiently perform DRAM writes, modern systems buffer write requests and try to complete multiple write operations whenever the DRAM mode is switched from read to write.…

With the rapid advancements of deep learning in recent years, hardware accelerators are continuously deployed in more and more safety-critical applications such as autonomous driving and robotics. While the accelerators are usually…

In modern solid-state drives (SSDs), the indexing of flash pages is a critical component in their storage controllers. It not only affects the data access performance, but also determines the efficiency of the precious in-device DRAM…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

SSDs are emerging storage devices which unlike HDDs, do not have mechanical parts and therefore, have superior performance compared to HDDs. Due to the high cost of SSDs, entirely replacing HDDs with SSDs is not economically justified.…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

We present LearnedFTL, a new on-demand page-level flash translation layer (FTL) design, which employs learned indexes to improve the address translation efficiency of flash-based SSDs. The first of its kind, it reduces the number of double…

This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's…

Recently, 3D SSDs are widely adopted in PCs, data centers, and cloud storage systems. To increase capacity, high bit-density cells, such as Triple-Level Cell (TLC), are utilized within 3D SSDs. However, due to the inferior performance of…

The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unknown during the readback process. This severely affects the…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Solid state drives have a number of interesting characteristics. However, there are numerous file system and storage design issues for SSDs that impact the performance and device endurance. Many flash-oriented and flash-friendly file…