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Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we…
Ultrafast electron-phonon relaxation dynamics in graphene hides many distinct phenomena, such as hot phonon generation, dynamical Kohn anomalies, and phonon decoupling, yet still remains largely unexplored. Here, we unravel intricate…
At the heart of current information nanotechnology lies the search for ideal platforms hosting the smallest possible magnets, i.e. single atoms with magnetic moments pointing out-of-plane, as requested in a binary-type of memory. For this…
The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the…
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene…
We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $\lambda_s$ up to 13~\textmu m at room temperature with…
We propose an intrinsic spin scattering mechanism in graphene originated by the interplay of atomic spin-orbit interaction and the local curvature induced by flexural distortions of the atomic lattice. Starting from a multiorbital…
We introduce a different perspective describing electron-phonon interactions in graphene based on curved space hydrodynamics. Interactions of phonons with charge carriers increase the electrical resistivity of the material. Our approach…
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor…
Graphene sheets with regular perforations, dubbed as antidot lattices, have theoretically been predicted to have a number of interesting properties. Their recent experimental realization with lattice constants below 100 nanometers stresses…
A formula for the electron spin relaxation rate of an electron-phonon system is derived using a new spring-loop diagram method. The result contains the distribution functions for the electrons and phonons properly. Therefore, all the spin…
A theory of spin relaxation in graphene including intrinsic, Bychkov-Rashba, and ripple spin-orbit coupling is presented. We find from spin relaxation data by Tombros et al. [Nature 448, 571 (2007).] that intrinsic spin-orbit coupling…
Modeling spin-wave (magnon) dynamics in novel materials is important to advance spintronics and spin-based quantum technologies. The interactions between magnons and lattice vibrations (phonons) limit the length scale for magnon transport.…
We assess the impact of atomistic substrate lattice relaxation schemes in the primary band gap at charge neutrality and the secondary valence band gap of graphene on hexagonal boron nitride (G/h-BN) as a function of twist angle. For zero…
A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $\tau_{\text{s}}$ near $10$ ns at best…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…