Related papers: Electric fields and substrates dramatically accele…
We study the influence of ripple waves originating from the electromechanical effects on spin relaxation caused by electromagnetic fields in armchair and zigzag graphene nanoribbons (GNRs). By utilizing analytical expressions supported by…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin…
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron…
We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous…
Graphene sheets encapsulated between hexagonal Boron Nitride (hBN) slabs display superb electronic properties due to very limited scattering from extrinsic disorder sources such as Coulomb impurities and corrugations. Such samples are…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were…
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the…
Thanks to its intrinsic ability to preserve spin coherence, graphene is a prime material for spintronics. In this review article, we summarize recent achievements related to spintronics in graphene quantum dots and motivate this field from…
Knowing the influence of the substrate type on the diffusion coefficient and the momentum relaxation in graphene is of great importance for the development of new device models specifically adapted to the peculiarities of this material. In…
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning…
Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal…
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an…
The relaxation process of electron spin in systems of electrons interacting with piezoelectric deformation phonons that are mediated through spin-orbit interactions was interpreted from a microscopic point of view using the formula for the…
We study the spin relaxation in graphene due to magnetic moments induced by defects. We propose and employ in our studies a microscopic model that describes magnetic impurity scattering processes mediated by charge puddles. This model…
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick…
The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…
Phonons are responsible for limiting both the electron mobility and the spin relaxation time in solids and provide a mechanism for thermal transport. In view of a possible transistor function as well as spintronics applications in graphene…