Related papers: Optimizing lateral quantum dot geometries for redu…
Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three…
A method for increasing the accuracy of configuration interaction (CI) calculations of molecules and other electronic systems is proposed. The energy defect of a given calculation is associated with the electron pair origin of…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the…
Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field…
Addressability of spin qubits in a silicon double quantum dot setup in the (1,1) charge configuration relies on having a large difference between the Zeeman splittings of the electrons. When the difference is not sufficiently large, the…
Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is…
Resonant exchange qubits are a promising addition to the family of experimentally implemented encodings of single qubits using semiconductor quantum dots. We have shown previously that it ought to be straightforward to perform a CPHASE gate…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional…
We present a theoretical study of a four-electron four-quantum-dot system based on molecular orbital methods, which hosts a pair of singlet-triplet spin qubits. We explicitly take into account of the admixture of electron wave functions in…
We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise…
The construction of two-qubit gates appropriate for universal quantum computation is of enormous importance to quantum information processing. Building such gates is dependent on accurate knowledge of the interaction dynamics between two…
Measurement-based quantum computing (MBQC) promises natural compatibility with quantum error correcting codes at the cost of a polynomial increase in physical qubits. MBQC proposals have largely focused on photonic systems, where 2-qubit…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
Strong correlation effects in a capacitively coupled double quantum-dot setup were previously shown to provide the possibility of both entangling spin-charge degrees of freedom and realizing efficient spin-filtering operations by static…
The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded…
Motivated by activities of several experimental groups we investigate electron transport through two coherent, strongly coupled quantum dots ("double quantum dots"), taking into account both intra- and inter-dot Coulomb interactions. The…
We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\varepsilon$ and $\varepsilon_{M}$, which…