Related papers: Optimizing lateral quantum dot geometries for redu…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
In double quantum dot singlet-triplet qubits, the exchange interaction is used in both quantum gate operation and the measurement of the state of the qubit. The exchange can be controlled electronically by applying gate voltage pulses. We…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Trapped-ion systems are a leading platform for quantum computing. The M{\o}lmer-S{\o}rensen (MS) gate is a widely used method for implementing controlled interactions in multipartite systems. However, due to unavoidable interactions with…
Quantum circuits implementing fault-tolerant quantum error correction (QEC) for the three qubit bit-flip code and five-qubit code are studied. To describe the effect of noise, we apply a model based on a generalized effective Hamiltonian…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
In this study, we present the design and analysis of a Low Noise Amplifier tailored specifically for quantum applications. We selected the HEMT for its unique noise reduction properties, crucial for quantum engineering. The main goal is to…
Recent quantum technologies and quantum error-correcting codes emphasize the requirement for arranging interacting qubits in a nearest-neighbor (NN) configuration while mapping a quantum circuit onto a given hardware device, in order to…
Exchange interaction has been studied for electrons in coupled quantum dots (QD's) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same…
Partitioning transportation networks into balanced and spatially coherent traffic zones is a fundamental yet computationally challenging task in intelligent transportation systems. The resulting optimization problem exhibits dense…
We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…
Quantum circuits with local particle number conservation (LPNC) restrict the quantum computation to a subspace of the Hilbert space of the qubit register. In a noiseless or fault-tolerant quantum computation, such quantities are preserved.…
We study the occupation of two electrostatically-coupled single-level quantum dots with spinless electrons as a function of gate voltage. While the total occupation of the double-dot system varies monotonically with gate voltage, we predict…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…
The first generation of multi-qubit quantum technologies will consist of noisy, intermediate-scale devices for which active error correction remains out of reach. To exploit such devices, it is thus imperative to use passive error…
Full connectivity of qubits is necessary for most quantum algorithms, which is difficult to directly implement on Noisy Intermediate-Scale Quantum processors. However, inserting swap gate to enable the two-qubit gates between uncoupled…