Related papers: Energy-efficient spin injector into semiconductors…
Transmission and processing of information at the nanoscale using spin waves and their quanta - magnons, offers numerous advantages and opportunities that make it a promising next-generation technology for integrated electronics. The main…
We have directly measured coherent high-frequency magnetization dynamics in ferromagnet films induced by a spin-polarized DC current. The precession frequency can be tuned over a range of several gigahertz, by varying the applied current.…
The modulation of propagating spin-wave amplitude in Ni81Fe19 (Py) films, resulting from constructive and destructive interference of spin wave, has been demonstrated. Spin waves were excited and detected inductively using pulse inductive…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
A charge flow through a magnetic tunnel junction (MTJ) leads to the generation of a spin-polarized current which exerts a spin-transfer torque (STT) on the magnetization. When the density of applied direct current exceeds some critical…
Topological non-collinear magnetic phases of matter are at the heart of many proposals for future information nanotechnology, with novel device concepts based on ultra-thin films and nanowires. Their operation requires understanding and…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
We demonstrate the design of a neural network, where all neuromorphic computing functions, including signal routing and nonlinear activation are performed by spin-wave propagation and interference. Weights and interconnections of the…
Spin-current injection into an organic semiconductor $\rm{\kappa\text{-}(BEDT\text{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by…
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in…
Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current…
The utilization of spin waves as eigenmodes of the magnetization dynamics for information processing and communication has been widely explored recently due to its high operational speed with low power consumption and possible applications…
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
We report a THz emitter with excellent performances based on nonmagnetic (NM) and ferromagnetic (FM) heterostructures. The spin currents are first excited by the femtosecond laser beam in the NM/FM bilayer, and then transient charge…