Related papers: Stoichiometric Bi2Se3 Topological Insulator Ultra-…
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…
Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…
Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point…
Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the…
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the…
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet…
The structural and electronic properties of FeSe ultra-thin layers on Bi$_{2}$Se$_{3}$ have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe…
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The…
We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given…
BaTiO3 is a technologically relevant material in the perovskite oxide class with above room temperature ferroelectricity and a very large electro optical coefficient, making it highly suitable for emerging electronic and photonic devices.…
The discovery of topological insulators (TIs) and their unique electronic properties has motivated research into a variety of applications, including quantum computing. It has been proposed that TI surface states will be energetically…
We have fabricated high-quality FeSe1-x superconducting films with a bulk Tc of 11-12 K on different substrates, Al2O3(0001), SrTiO3(100), MgO(100), and LaAlO3(100), by using a pulsed laser deposition technique. All the films were grown at…
We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in…
The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and…
The structural and compositional stabilities of two dimensional 2D Bi2Te3 and Bi2Se3 nanocrystals, produced by both colloidal synthesis and by liquid phase exfoliation, were studied by in situ transmission electron microscopy TEM during…
Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon…
We report scanning tunnelling microscopy and spectroscopy (STM/STS) studies on one and two unit cell (UC) high FeSe thin films grown on Bi$_2$Se$_3$(0001). In our thin films, we find the tetragonal phase of FeSe and dumb-bell shaped defects…