Related papers: Strong and tunable spin-orbit interaction in a sin…
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays…
The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of…
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a…
Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate…
We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime we…
Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental…
A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called…
We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb…
We propose to use the spin-orbit interaction as a means to control electron spins in quantum dots, enabling both single qubit and two qubit operations. Very fast single qubit operations may be achieved by temporarily displacing the…
In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC)…
Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We investigate a novel way to manipulate the spin polarized transmission in a two terminal zigzag graphene nanoribbon in presence of Rashba spin-orbit (SO) interaction with circular shaped cavity engraved into it. A usual technique to…
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the…
Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…
We study theoretically the spin-orbit interaction of electrons confined in a tubular semiconductor nanowire, between an inner semiconductor core and an outer metallic extra shell. A band off-offset potential is present at the inner…
We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional…
Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast all-electric operations at low power. However, spin-orbit interaction also causes…