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We study the electronic and local structural properties of pure and In-substituted $\beta$-Ga$_2$O$_3$ using density functional theory (DFT). Our main result is that the structural energetics of In in Ga$_2$O$_3$ causes most sites to be…

Materials Science · Physics 2015-01-22 M B Maccioni , F Ricci , V Fiorentini

Electronic properties and atomic structures of W, N, S, W/N, and W/S dopings of anatase TiO_2 have been systematically investigated using the density functional theory (DFT). The exchange and correlation effects have been treated with Heyd,…

Strongly Correlated Electrons · Physics 2012-11-19 Veysel Çelik , Ersen Mete

Density functional calculations are carried out to understand and tailor the electrochemical profile diffusivity, band gap and open circuit voltage of transition metal doped olivine phosphate $LiFe_{1-x}M_{x}PO_{4}$ (M = V, Cr, Mn, Co and…

Materials Science · Physics 2017-03-30 Ajit Jena , B. R. K. Nanda

Two-dimensional (2D) Janus transitional metal dichalcogenides (TMDCs) have great potential for photocatalytic water splitting due to their novel properties induced by the unique out-of-plane asymmetric structures. Here, we systematically…

Materials Science · Physics 2021-05-31 Yi-Ming Zhao , Pengju Ren , Xing-Yu Ma , James P. Lewis , Qing-Bo Yan , Gang Su

Contradictory theoretical results for oxygen vacancies in SrTiO$_3$ (STO) were often related to the peculiar properties of STO, which is a $d^0$ transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time,…

Materials Science · Physics 2020-07-01 Chiara Ricca , Iurii Timrov , Matteo Cococcioni , Nicola Marzari , Ulrich Aschauer

The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and…

Materials Science · Physics 2015-05-18 Julia E. Medvedeva , Chaminda L. Hettiarachchi

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure.…

Mesoscale and Nanoscale Physics · Physics 2016-06-10 Amithraj Valsaraj , Jiwon Chang , Amritesh Rai , Leonard F. Register , Sanjay K. Banerjee

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

Materials Science · Physics 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field…

Titanium dioxide is one of the most widely investigated oxides. This is due to its broad range of applications, from catalysis to photocatalysis to photovoltaics. Despite this large interest, many of its bulk properties have been sparsely…

Materials Science · Physics 2010-03-12 L. Chiodo , J. M. García-Lastra , D. J. Mowbray , A. Iacomino , A. Rubio

We investigate how field-effect doping affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and…

Mesoscale and Nanoscale Physics · Physics 2015-05-05 Thomas Brumme , Matteo Calandra , Francesco Mauri

We use combine high resolution neutron diffraction (HRPD) with density functional theory (DFT) to investigate the exchange striction at the Curie temperature (TC) of Fe2P and to examine the effect of boron and carbon doping on the P site.…

Materials Science · Physics 2013-07-26 Z. Gercsi , E. K. Delczeg-Czirjak , L. Vitos , A. S. Wills , A. Daoud-Aladine , K. G. Sandeman

In this paper we investigate the effect of Cd doping at ultra-low concentrations in SnO$_2$ both experimentally, by measuring the temperature dependence of the electric quadrupole hyperfine interactions with time-differential perturbed…

Materials Science · Physics 2019-01-23 Germán N. Darriba , Emiliano L. Muñoz , Artur W. Carbonari , Mario Rentería

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

Mesoscale and Nanoscale Physics · Physics 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

The weak-coupling quantum phase diagrams of the one-dimensional (1D) Holstein-Hubbard and Peierls-Hubbard models are computed near half-filling, using a multi-step renormalization group technique. If strong enough, the electron-phonon…

Superconductivity · Physics 2007-05-23 Ian P. Bindloss

The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark…

Materials Science · Physics 2017-12-14 Xiaobo Lu , Li Yang

In this work, we study the effect of doping the Rutile-type dioxide SnO2 material by the non-metal Sulfur (S) atoms on the electronic properties. In fact, we have used the ab-initio method applied on the basis of the Density Functional…

Materials Science · Physics 2021-08-12 S. Idrissi , L. Bahmad , A. Benyoussef

Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V4+ species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic…

Materials Science · Physics 2015-05-28 Ricardo Grau-Crespo , Udo Schwingenschlögl

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time,…

The interface properties between gold (Au) contacts and molybdenum disulfide (MoS2) are critical for optimizing the performance of semiconductor devices. This study investigates the impact of metal dopants (D) on the transport properties of…

Materials Science · Physics 2024-07-25 Saurabh Kharwar , Soham Sinha , Tarun Kumar Agarwal
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