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Related papers: Oxygen Vacancies in Strontium Titanate: a DFT+DMFT…

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The defect induced chemical expansion in acceptor-doped barium zirconate is investigated using density-functional theory (DFT) calculations. The two defect species involved in the hydration reaction, the +2 charged oxygen vacancy and the…

Materials Science · Physics 2015-09-01 Erik Jedvik , Anders Lindman , Magnús Þór Benediktsson , Göran Wahnström

Motivated by the puzzling report of the observation of a ferromagnetic insulating state in LaMnO$_3$/SrTiO$_3$ heterostructures, we calculate the electronic and magnetic state of LaMnO$_3$, coherently matched to a SrTiO$_3$ square substrate…

Materials Science · Physics 2019-09-25 Hrishit Banerjee , Oleg Janson , Karsten Held , Tanusri Saha-Dasgupta

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is…

The defect stability in a prototypical perovskite oxide superlattice consisting of SrTiO$_3$ and PbTiO$_3$ (STO/PTO) is determined using first principles density functional theory calculations. Specifically, the oxygen vacancy formation…

There has been a high demand in rectifying the band gap under-estimation problem in density functional theory (DFT), while keeping the computational load at the same level as local density approximation. DFT-1/2 and shell DFT-1/2 are useful…

Materials Science · Physics 2025-07-08 Shengxin Yang , Jiangzhen Shi , Kan-Hao Xue , Jun-Hui Yuan , Xiangshui Miao

Surface strain often controls properties of the material including charge transport and chemical reactivity. Localized surface strain is measured with atomic resolution on (111) ceria nanoparticle surfaces using environmental transmission…

Materials Science · Physics 2023-05-19 Piyush Haluai , Tara M. Boland , Ethan L. Lawrence , Peter A. Crozier

The 2DEG at the LaAlO3/SrTiO3 interface promises to add a new dimension to emerging electronic devices due to its high tunability. Defects in the form of Oxygen vacancies in titanate surfaces and interfaces, on the other hand, play a key…

Superconductivity · Physics 2014-05-14 N. Mohanta , A. Taraphder

It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$,…

Strongly Correlated Electrons · Physics 2020-08-26 A. F. Santander-Syro , J. Dai , T. C. Rödel , E. Frantzeskakis , F. Fortuna , R. Weht , M. J. Rozenberg

In this study, oxygen vacancies and adatoms have been considered on the surface of both hexagonal and triangular ZnO nanowires. Their effect on the electronic structure and optical spectra of the nanowires have been investigated using the…

Strongly Correlated Electrons · Physics 2018-03-01 Veysel Çelik , Ersen Mete

The exact formulation of multi-configuration density-functional theory (DFT) is discussed in this work. As an alternative to range-separated methods, where electron correlation effects are split in the coordinate space, the combination of…

Chemical Physics · Physics 2015-02-26 Emmanuel Fromager

We present a unique compact model for oxide memristors, based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction…

Applied Physics · Physics 2022-04-13 Andre Zeumault , Shamiul Alam , Md Omar Faruk , Ahmedullah Aziz

We propose a self-consistent site-dependent Hubbard $U$ approach for DFT+$U$ calculations of defects in complex transition-metal oxides, using Hubbard parameters computed via linear-response theory. The formation of a defect locally…

Materials Science · Physics 2019-04-04 Chiara Ricca , Iurii Timrov , Matteo Cococcioni , Nicola Marzari , Ulrich Aschauer

We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy…

Oxygen vacancy formation energy is an important quantity for enabling fast oxygen diffusion and oxygen catalysis in technologies like solid oxide fuel cells. Both previous literature in various systems and our calculations in LaMnO3,…

Materials Science · Physics 2017-11-29 Tam Mayeshiba , Dane Morgan

We analyze the effects on the structural and electronic properties of vanadium dioxide (VO$_2$) of adding an empirical inter-atomic potential within the density-functional theory$+V$ (DFT$+V$) framework. We use the DFT$+V$ machinery founded…

Materials Science · Physics 2025-04-15 Lea Haas , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

The two-dimensional electron gas (2DEG) in reduced strontium titanate offers a versatile platform for oxide electronics, yet its dissipation mechanisms under field driven charge fluctuations remain poorly understood. Here, we combine…

Materials Science · Physics 2026-05-13 Akash Gupta , Marcin Kisiel , Remy Pawlak , Ernst Meyer

We investigate signatures of spin and orbital states of $R$VO$_{3}$ ($R$=Y and La) in the optical conductivity using density functional theory plus dynamical mean-field theory (DFT+DMFT). From the assignment of multiplet states to optical…

Strongly Correlated Electrons · Physics 2018-04-20 Minjae Kim

The relaxation rate in Nb-doped strontium titanate involving different scattering channels is investigated theoretically. It is demonstrated that the total relaxation rate in SrTiO_{3} is provided mainly by two mechanisms. The Baber…

Strongly Correlated Electrons · Physics 2012-11-14 S. N. Klimin , J. Tempere , D. van der Marel , J. T. Devreese

In this work we study the stabilization of the orthorhombic phases in small Hf0.5Zr0.5O2 nanoparticles (average size ~ 7 nm) annealed under different oxygen partial pressures. Concentration of the oxygen vacancies, which is determined by…

Divalent tin oxides have attracted considerable attention as novel p-type oxide semiconductors, which are essential for realizing future oxide electronic devices. Recently, p-type Sn2Nb2O7 and SnNb2O6 were developed; however, enhanced hole…

Materials Science · Physics 2020-12-25 Akane Samizo , Makoto Minohara , Naoto Kikuchi , Kyoko K. Bando , Yoshihiro Aiura , Ko Mibu , Keishi Nishio