Related papers: Atomically sharp domain walls in an antiferromagne…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
We carry out large-scale micromagnetic simulations which demonstrate that due to topological constraints, internal domain walls (Bloch lines) within extended domain walls are more robust than domain walls in nanowires. Thus, the possibility…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial…
We resolve the domain-wall structure of the model antiferromagnet $\text{Cr}_2\text{O}_3$ using nanoscale scanning diamond magnetometry and second-harmonic-generation microscopy. We find that the 180$^\circ$ domain walls are predominantly…
We report coherent X-ray imaging of antiferromagnetic (AFM) domains and domain walls in MnBi$_2$Te$_4$, an intrinsic AFM topological insulator. This technique enables direct visualization of domain morphology without reconstruction…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing.…
The geometry and morphology of magnetic domain walls (DWs) are closely related to their dynamics when driven by external forces. Under some reliable approximations DWs can be considered self-affine interfaces, so universal laws govern their…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
Antiferromagnets (AFMs) hold promise for applications in digital logic. However, switching AFM domains is challenging, as magnetic fields do not couple to the bulk antiferromagnetic order parameter. Here we show that magnetic-field-driven…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Domain walls in ferrimagnets and antiferromagnets behave as relativistic sine-Gordon solitons with the spin-wave group velocity setting the ultimate velocity of domain walls and speed of magnetic devices. While this relativistic regime has…
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was…
For over ten years, arrays of interacting single-domain nanomagnets, referred to as artificial spin ices, have been engineered with the aim to study frustration in model spin systems. Here, we use Fresnel imaging to study the reversal…
Antiferromagnets hosting real-space topological spin textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, to date, they have only been fabricated epitaxially on specific…
Antiferromagnets (AFMs) exhibit intrinsic magnetization when the order parameter spatially varies. This intrinsic spin is present even at equilibrium and can be interpreted as a twisting of the homogeneous AFM into a state with a finite…
We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has…
Domain wall motion underpins emerging spintronic technologies, such as high-speed racetrack devices and THz logic, and accelerating walls quickly is a key challenge on the path to faster devices. Recent experimental advances introduced…
Movements of individual domain walls in a ferromagnetic garnet were studied with angstrom resolution. The measurements reveal that domain walls can be locked between adjacent crystallographic planes and propagate by distinct steps matching…