Related papers: High Temperature Quantum Kinetic Effect in Silicon…
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC.…
We present a theory of the thermal Hall effect in insulating quantum magnets, where the heat current is totally carried by charge-neutral objects such as magnons and spinons. Two distinct types of thermal Hall responses are identified. For…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
We study the dynamics of a quantum particle in a constricted two-dimensional channel and analyze how the onset of quantum corrections impacts the (semi-)classical high-temperature behaviour, as temperature is lowered. We characterize both…
We study analytically the evolution of superconductivity in clean quasi-two-dimensional multiband supercon- ductors as the film thickness enters the nanoscale region by mean-field and semiclassical techniques. Tunneling into the substrate…
The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the…
We study the combined effect of thermal and quantum fluctuations in a zero dimensional superconductor. By using path integral techniques, we obtain novel expressions for the partition function and the superconducting order parameter which…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and…
The effect of temperature on the operation of the elementary quantum-dot spin gates for single-electron computing is studied theoretically within the framework of the Hubbard model by the example of the NOT-AND gate. The calculated values…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
We study numerically the influence of non-resonant effects on the dynamics of a single $\pi$-pulse quantum CONTROL-NOT (CN) gate in a macroscopic ensemble of fo ur-spin molecules at room temperature. The four nuclear spins in each molecule…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states where the spin of the charge carriers is locked to their direction of motion. In order to probe the properties of the edge modes, we propose a…
We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the…
We present theoretical studies of temperature dependent diamagnetic-paramagnetic transitions in thin quantum rings. Our studies show that the magnetic susceptibility of metal/semiconductor rings can exhibit multiple sign flips at…
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge…