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We realize a laser with a cloud of cold rubidium atoms as gain medium, placed in a low-finesse cavity. Three different regimes of laser emission are observed corresponding respectively to Mollow, Raman and Four Wave Mixing mechanisms. We…
Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements…
Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
High-power lasers with narrow linewidth and high beam quality in the visible spectrum are essential for emerging quantum and space technologies. Here we report significant advances in diamond Raman lasers, generating diffraction-limited…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures.…
Thermalization losses in Laser Power Converters for the first transmission window occur due to the energy difference between 808 nm wavelength photons and the GaAs bandgap energy which results in lower efficiency. In this work, we analyze…
Materials with reduced dimensionality offer beneficial density-of-states (DOS) profiles for thermoelectric energy conversion, but can be impractical in realistic devices. Encouragingly, bulk high-symmetry materials can also exhibit similar…
We report on the first results of laser plasma wakefield acceleration driven by ultrashort mid-infrared laser pulses (\lambda= 3.9 \mu m, 100 fs, 0.25 TW), which enable near- and above-critical density interactions with moderate-density gas…
We report on the operation of a double metal waveguide far-infrared quantum cascade laser emitting at 28 $\mu$m, corresponding to the AlAs-like phonon Reststrahlen band. To avoid absorption by AlAs-like optical phonons, the Al-free group-V…
Due to the high spontaneous emission coupled into the resonance mode in metallic nanolasers, there has been a debate concerning the coherence properties of this family of light sources. The second-order coherence function can unambiguously…
We report the design, fabrication and characterization of ultralight highly emissive metaphotonic structures with record-low mass/area that emit thermal radiation efficiently over a broad spectral (2 to 35 microns) and angular (0-60…
We investigate the statistics of the intensity distributions as function of the wavelength for Ca II H and the CA II IR line at 854.2 nm to estimate the energy content. We derived the intensity variations at different heights of the solar…
Wide-gap Cu(In,Ga)S2 solar cells with In2O3:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by…
We report the observation of large ($\sim 40%$) laser-induced above-bandgap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrard laser pulses and its spectral…
Here we report an optical investigation in the terahertz region of a 40 nm ultrathin BaFe$_{1.84}$Co$_{0.16}$As$_2$ superconducting film with superconducting transition temperature T$_c$ = 17.5 K. A detailed analysis of the combined…
Terahertz quantum cascade lasers based on InGaAs wells and quaternary AlInGaAs barriers were measured in magnetic field. This study was carried out on a four quantum well active region design with photon energy of 14.3 meV processed both…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…