English

Laser-Induced Above-Bandgap Transparency in GaAs

Materials Science 2009-11-10 v1 Mesoscale and Nanoscale Physics

Abstract

We report the observation of large (40\sim 40%) laser-induced above-bandgap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrard laser pulses and its spectral shape is consistent with a laser-induced blue shift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating in particular that the amount of the band edge shift is approximately given by the ponderomtive potential.

Keywords

Cite

@article{arxiv.cond-mat/0403528,
  title  = {Laser-Induced Above-Bandgap Transparency in GaAs},
  author = {A. Srivastava and R. Srivastava and J. Wang and J. Kono},
  journal= {arXiv preprint arXiv:cond-mat/0403528},
  year   = {2009}
}

Comments

4 pages, 4 figures