Ab Initio calculation of band gap renormalization in highly excited GaAs
Materials Science
2009-11-10 v2
Abstract
We present ab initio quasiparticle self-energy calculations in crystalline GaAs for cases of intense electronic excitation (~ 10% of valence electrons excited into conduction band), relevant for high-intensity ultra-short pulsed laser experiments. Calculations are performed using an out-of-equilibrium generalization of the GW approximation based on the Keldysh Green's function approach. Our results indicate that while the band gap is a sensitive function of the amount of excitation, it is not possible to induce complete band gap closure in this system by purely electronic means.
Keywords
Cite
@article{arxiv.cond-mat/0401407,
title = {Ab Initio calculation of band gap renormalization in highly excited GaAs},
author = {Catalin D. Spataru and Lorin X. Benedict and Steven G. Louie},
journal= {arXiv preprint arXiv:cond-mat/0401407},
year = {2009}
}
Comments
14 pages, 7 figures, submitted Phys. Rev. B