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Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an…

Materials Science · Physics 2015-06-29 H. J. Liu , L. Jiao , L. Xie , F. Yang , J. L. Chen , W. K. Ho , C. L. Gao , J. F. Jia , X. D. Cui , M. H. Xie

We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two…

Due to high surface to volume ratio and tunable band gap, 2 Dimensional (2D) layered materials such as MoS2, is good candidate for gas sensing applications. This research mainly focuses on variation of Density of States (DOS) of MoS2…

Mesoscale and Nanoscale Physics · Physics 2018-02-16 Seyed Ali Hosseini , Azam Irajizad , Masud Berahman , Farzaneh Aghakhani Mahyari , Seyed Hossein Hosseini Shokouh

Graphene is a truly two-dimensional material with exceptional electronic, mechanical, and optical properties. As such, it consists of surface only and can be probed by the well developed surface-science techniques as, e.g., scanning…

Mesoscale and Nanoscale Physics · Physics 2012-04-18 Markus Morgenstern

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks,…

Rapid proliferation of hyperspectral imaging in scanning probe microscopies creates unique opportunities to systematically capture and categorize higher dimensional datasets, toward new insights into electronic, mechanical and chemical…

Superconductivity · Physics 2024-04-23 Petro Maksymovych , Jiaqiang Yan , Brian Sales , Jun Wang

Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling…

Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the…

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG.…

We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum…

Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moir\'e patterns of…

In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures…

Mesoscale and Nanoscale Physics · Physics 2017-09-22 Sergio C. de la Barrera , Yu-Chuan Lin , Sarah M. Eichfeld , Joshua A. Robinson , Qin Gao , Michael Widom , Randall M. Feenstra

In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and…

Materials Science · Physics 2020-12-18 Shivangi Shree , Ioannis Paradisanos , Xavier Marie , Cedric Robert , Bernhard Urbaszek

Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the…

Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the…

Mesoscale and Nanoscale Physics · Physics 2015-06-16 A. A. Mitioglu , P. Plochocka , Á. Granados del Aguila , P. C. M. Christianen , G. Deligeorgis , S. Anghel , L. Kulyuk , D. K. Maude

We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Matthew Yankowitz , Devin McKenzie , Brian J. LeRoy

Automatic discovery and curve fitting of absorption bands in hyperspectral data can enable the analyst to identify materials present in a scene by comparison with library spectra. This procedure is common in laboratory spectra, but is…

Instrumentation and Methods for Astrophysics · Physics 2014-01-23 Adrian J. Brown

The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge.…

Materials Science · Physics 2017-08-01 G. Wang , C. Robert , M. M. Glazov , F. Cadiz , E. Courtade , T. Amand , D. Lagarde , T. Taniguchi , K. Watanabe , B. Urbaszek , X. Marie

We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was…

A study is presented of the electronic band structure and optical absorption spectrum of monolayer WSe$_2$ using an all-electron quasiparticle self-consistent $GW$ approach, QS$G\hat W$, in which the screened Coulomb interaction $\hat W$ is…

Materials Science · Physics 2024-02-29 Niloufar Dadkhah , Walter R. L. Lambrecht
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