Related papers: Variability Analysis in a 3-D Multi-Granular Hf$_x…

The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…

Device-to-device variations in ferroelectric (FE) hafnium oxide (HfO2)-based devices pose a crucial challenge that limits the otherwise promising capabilities of this technology. Although previous simulation-based studies have identified…

Polycrystalline hafnia-based thin films exhibit mixed ferroelectric (FE), antiferroelectric (AFE), and dielectric (DE) behavior, with switching characteristics strongly influenced by microstructure and phase distribution. Here, we develop a…

A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically…

Recent advances in ferroelectrics highlight the role of three-dimensional (3D) polar entities in forming topological polar textures and generating giant electromechanical responses, during polarization rotation. However, current electron…

Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…

While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

In unresolved flow CFD-DEM simulations, the porosity values for each CFD cell are determined using a coarse-graining algorithm. While this approach enables coupled simulations of representative numbers of particles, the influence of the…

The discovery of two-dimensional (2D) materials possessing switchable spontaneous polarization with atomic thickness opens up exciting opportunities to realize ultrathin, high-density electronic devices with potential applications ranging…

In order to understand the physical hysteresis loops clearly, we constructed a novel model, which is combined with the electric field, the temperature, and the stress as one synthetically parameter. This model revealed the shape of…

Two models have recently been proposed for a description of dielectric spectroscopy measurements of ferroelectric nematics (NF) in thin planar capacitors. The polarization-external capacitance Goldstone reorientation mode (PCG model)…

With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…

The emergent behaviors in thin films of a multiaxial ferroelectric due to an electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2-4 Landau-Ginzburg-Devonshire (LGD)…

Typical ferroelectrics possess a large spontaneous polarization Ps but simultaneously a large remnant polarization Pr as well, resulting in an inferior energy storage density.A mechanism that can reduce the Pr while maintain the Ps is…

Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls…

HfO$_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO$_2$-based ferroelectric devices, dielectric breakdown is a main failure mechanism during repeated polarization…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

In this article, we use hybrid density functional (HSE06) to study the crystal and electronic structures and optical properties of well known phase change memory material $\mathrm{Ge_{2}Sb_{2}Te_{5}}$. We calculate the structural…

Deformation heterogeneities within microstructures of polycrystalline shape memory alloys (SMAs) during superelastic stressing are studied using both experiments and simulations. In situ X-ray diffraction, specifically the far-field high…