Related papers: Variability Analysis in a 3-D Multi-Granular Hf$_x…
HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal…
Fabrication process-induced performance variability remains a formidable barrier in the high-volume manufacturing of semiconductor chips. With skyrocketing Artificial Intelligence (AI) workload, demand for non-volatile and computational…
Topological polar textures in ferroelectrics have attracted significant interest for their potential for energy-efficient and high-density data storage and processing. Among these, polar merons and antimerons are predicted in strained and…
A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental improvements. This limitation fundamentally originates from…
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from…
Thermal dust polarization is a powerful tool to probe magnetic fields ($\textbf{B}$) and grain properties. However, a systematic study of the dependence of dust polarization on grain properties in protostellar environments is not yet…
Combined high-energy X-ray diffraction microscopy (HEDM) and crystal plasticity finite element (CPFE) modeling studies have emerged as a preferred paradigm to shed insight into the evolution of elasticity and plasticity at the intragrain…
Improving efficiency of electrical machines requires fundamental knowledge on the mechanisms behind magnetic and eddy current losses of the magnetic core materials, with Fe-Si alloy as a prototype. These losses are intrinsically influenced…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining…
We present a high-fidelity three dimensional computational framework for simulating the bulk mechanical behavior of granular aggregates composed of deformable brittle grains. Departing from classical discrete element methods (DEM), our…
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective…
Estimation of threshold voltage V T variability for NWFETs has been compu- tationally expensive due to lack of analytical models. Variability estimation of NWFET is essential to design the next generation logic circuits. Compared to any…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…
Herein, we present a novel analysis framework for grain size profile of ferroelectric hafnia to tackle critical shortcomings inherent in the current microstructural analysis. We vastly enhanced visibility of grains with ion beam treatment…
Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypothesis of variation in charged defects", which however are…
Ferroelectrics are widely used for a broad array of technological applications due to their attractive electrical and electromechanical properties. In order to obtain large functional properties, material compositions are often designed to…
Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real…
Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral…
We use first principles methods to study static and dynamical mechanical properties of the ferroelectric polymer Poly(vinylidene fluoride) (PVDF) and its copolymer with trifluoro ethylene (TrFE). We use density functional theory [within the…