Related papers: Wafer-Scale Epitaxial Modulation of Quantum Dot De…
We demonstrate that the presence of charge around a semiconductor quantum dot (QD) strongly affects its optical properties and produces non-resonant coupling to the modes of a microcavity. We first show that, besides (multi)exciton lines, a…
The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated molecular beam epitaxy, varying either the nominal thickness…
Thin film deposition is an essential step in the semiconductor process. During preparation or loading, the substrate is exposed to the air unavoidably, which has motivated studies of the process control to remove the surface oxide before…
In an oxide apertured quantum dot (QD) micropillar cavity-QED system, we found strong QD hysteresis effects and lineshape modifications even at very low intensities corresponding to less than 0.001 intracavity photons. We attribute this to…
We use an optical fiber taper waveguide to probe PbS quantum dots (QDs) dried on Si photonic crystal cavities near 1.55 $\mu$m. We demonstrate that a low density ($\lesssim 100 \mu$m$^{-2}$) of QDs does not significantly degrade cavity…
Spatially structured light fields applied to semiconductor quantum dots yield fundamentally different absorption spectra than homogeneous beams. In this paper, we theoretically discuss the resulting spectra for different light beams using a…
An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 10^{9} and 2x10^{11} cm^{-2}. The method is based on an analysis of…
In this work, control over the precise state emitted by quantum cascade laser frequency combs through strong radio-frequency current modulation close to their repetition frequency is demonstrated. In particular, broadening of the spectrum…
Magnetic doping of 2D materials such as Transition Metal Dichalcogenides is promising for the enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of…
We demonstrate the arbitrary control of the density profile of a two-dimensional Bose gas by shaping the optical potential applied to the atoms. We use a digital micromirror device (DMD) directly imaged onto the atomic cloud through a high…
Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential,…
We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection…
The unique optical properties of quantum dots (QDs), size-tunable emission and high quantum yield, make them ideal candidates for applications in secure quantum communication, quantum computing, targeted single-cell and molecular tagging,…
The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination…
Owing in large part to the advent of integrated biphoton frequency combs (BFCs), recent years have witnessed increased attention to quantum information processing in the frequency domain for its inherent high dimensionality and entanglement…
In this study, we report here on a successful growth by molecular beam epitaxy of high crystalline quality Pb$_{1-x}$Sn$_{x}$Se:Bi/Pb$_{1-y}$Eu$_{y}$Se QWs with $x = 0.25$ and $y = 0.1$, and on their magnetotransport characterization as a…
Ultra-small (r<2 nm) semiconductor quantum dots (QDs) have attracted attention for applications ranging from dye sensitized solar cells to sensing due to its tunable electronic structure and band gap, and large specific surface area.…
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber…
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band…
We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as a…