Related papers: Single Microhole per Pixel in CMOS Image Sensor wi…

This paper focuses on the conversion gain (CG) of pixels implementing pinned photo-diodes (PPD) and in-pixel voltage follower in standard CMOS image sensor (CIS) process. An overview of the CG expression and its impact on the noise…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across…

The absorptance of p-polarized light in superconducting-nanowire single-photon detectors (SNSPDs) was improved by integrating (1) ~quarter-wavelength nano-optical cavity closed by a gold reflector (OC-SNSPD), (2) nano-cavity-array closed by…

Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…

We report a compact, scalable, and high-performance superconducting nanowire single-photon detector (SNSPD) array by using a multichannel optical fiber array-coupled configuration. For single pixels with an active area of 18 um in diameter…

Conventional image sensors are only responsive to the intensity variation of the incoming light wave. By encoding the wavefront information into the balanced detection scheme, we demonstrate an image sensor pixel design that is capable to…

We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…

In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices…

We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of…

The requirements to achieve high detection efficiency (above 50\%) and gigahertz (GHz) frame rate for the proposed 42-keV X-ray free-electron laser (XFEL) at Los Alamos are summarized. Direct detection scenarios using C (diamond), Si, Ge…

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…

This work-in-progress paper presents results on the feasibility of single-shot object detection on microcontrollers using YOLO. Single-shot object detectors like YOLO are widely used, however due to their complexity mainly on larger…

Single photonic applications - such as quantum key distribution - rely on the transmission of single photons, and require the ultimate sensitivity that an optical detector can achieve. Single-photon detectors must convert the energy of an…

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel…

One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…

Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…

The detection of individual photons is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multi-color imaging techniques, such as single photon spectroscopy,…

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…

We demonstrated a CMOS imaging system that adapts each pixel's exposure and sampling rate to capture high dynamic range (HDR) videos. The system consist of a custom designed image sensor with pixel-wise exposure configurability and a…