Related papers: Single Microhole per Pixel in CMOS Image Sensor wi…
We present the development of a single-photon detector and the connected read-out electronics. This `hybrid' detector is based on a vacuum tube, transmission photocathode, microchannel plate and a pixelated CMOS read-out anode encapsulating…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics.…
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…
Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Emerging applications in biomedical and communication fields…
This work presents a new super-resolution imaging approach by using subwavelength hole resonances. We employ a subwavelength structure in which an array of tiny holes are etched in a metallic slab with the neighboring distance $\ell$ that…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
In this paper, an in-pixel chopping technique to reduce the low-frequency or 1/f noise of the source follower (SF) transistor in an active pixel sensor (APS) is presented. The SF low-frequency noise is modulated at higher frequencies…
High-resolution infrared imagers are currently more expensive than CMOS and CCD cameras, due to costly sensor arrays. Van der Waals (vdWs) materials present an opportunity for low-cost, room temperature infrared photodetectors. Although…
Snapshot spectral imaging is rapidly gaining interest for remote sensing applications. Acquiring spatial and spectral data within one image promotes fast measurement times, and reduces the need for stabilized scanning imaging systems. Many…
Since the invention of digital cameras there has been a concerted drive towards detector arrays with higher spatial resolution. Microscanning is a technique that provides a final higher resolution image by combining multiple images of a…
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Intrapixel nonuniformity is known to exist in CCD and CMOS image sensors, though the effects in backside illuminated (BSI) CCDs are too small to be a concern for most astronomical observations. However, projects like the Large Synoptic…
Microscopy is an essential tool in imaging research, and the edge-enhanced microscope by using the vortex filter is of particular interest as an optical information processing that highlights amplitude and phase edges of object in all…
Single atom imaging requires discrimination of weak photon count events above background and has typically been performed using either EMCCD cameras, photomultiplier tubes or single photon counting modules. sCMOS provides a cost effective…