Related papers: Single Microhole per Pixel in CMOS Image Sensor wi…
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…
We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at the pixels' bottom and the top and the holes that are…
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times…
We consider the free carrier dispersion effect in a semiconductor nanocavity in the limit of discrete photoexcited electron-hole pairs. This analysis reveals the possibility of ultrafast, incoherent transduction and gain from a single…
A novel concept to enhance the photo-detection efficiency (PDE) of silicon photomultipliers (SiPMs) has been applied and remarkable positive results can be reported. This concept uses arrays of microlenses to cover every second SiPM pixel…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…
CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…
Single-pixel imaging, originally developed in light optics, facilitates fast three-dimensional sample reconstruction, as well as probing with light wavelengths undetectable by conventional multi-pixel detectors. However, the spatial…
Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon…
Single Pixel Imaging is an emerging imaging technique that employs a bucket detector (photodiode) to sample a spatially modulated light field, rather than measuring the spatial distribution with an array of detectors. This approach provides…
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented…
One of the main limitations for the resolution of optical instruments is the size of the sensor's pixels. In this paper we introduce a new sub pixel resolution algorithm to enhance the resolution of images. This method is based on the…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
Studies of a single photon counting hybrid pixel detector for X-ray imaging applications are presented. A silicon- and a CdTe-sensor were bump bonded onto the MPEC pixel readout chip and could be successfully operated. A new USB based…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…
A multi-pixel photon sensor with single-photon sensitivity has been developed, based on a technology of a hybrid photo-detector (HPD) consisting of a photocathode and a multi-pixel avalanche diode (MP-AD). The developed HPD has a proximity…
Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it…
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…