Related papers: Superconducting TiN films grown by directional rea…
This work investigates the effect of a scandium nitride buffer layer on the superconducting properties of niobium nitride thin films. The use of a ScN buffer layer significantly improves the characteristics of 29 nm thick NbN films: the…
We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…
Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to…
Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and…
Although transition-metal nitrides have been widely applied for several decades, experimental investigations of their high-resolution electronic band structures are rare due to the lack of high-quality single-crystalline samples. Here, we…
We have optimized the growth of superconducting TaN thin films on \ch{SiO2} substrates via dc magnetron sputtering and extract a maximum superconducting transition temperature of $T_{\mathrm{c}}=5$ K as well as a maximum critical field…
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material…
We have designed, fabricated and tested a frequency-tunable high-Q superconducting resonator made from a niobium titanium nitride film. The frequency tunability is achieved by injecting a DC current through a current-directing circuit into…
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be…
Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The…
We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…
a-Nb(x)Si(1-x) thin films with thicknesses down to 25 {\AA} have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in…
Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The…
Ca- and Zn-subsituted Y1-xCaxBa2(Cu1-yZny)O7-delta (x = 0, 0.05 and y = 0, 0.02, 0.04, 0.05) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition (PLD) technique. Effects of various growth parameters on the…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
Superconducting FeSe0.8Te0.2 thin films on SrTiO3, LaAlO3 and CaF2 substrates were electrochemically etched in an ionic liquid DEME-TFSI electrolyte with a gate bias of 5 V. Superconductivity at 38 K was commonly observed on all substrates…
We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te…
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 \mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the…